Characterization of Stress at a Ceramic/Metal Joined Interface by the V(z) Technique of Scanning Acoustic Microscopy

[+] Author and Article Information
Chiaki Miyasaka, Bernard R. Tittmann

The Pennsylvania State University, 212 Earth and Engineering Science Building, University Park, PA 16802

Shun-Ichiro Tanaka

The University of Tokyo, Tokyo 153, Japan

J. Pressure Vessel Technol 124(3), 336-342 (Jul 26, 2002) (7 pages) doi:10.1115/1.1480824 History: Received March 22, 2001; Revised March 29, 2002; Online July 26, 2002
Copyright © 2002 by ASME
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Measuring points of specimen
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Vsaw distribution frequency: 400 MHz, point focus lens was used—(a) standard specimen; (b) defective specimen
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Micro-defects formed by SEM
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Schematic view of specimen
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Original V(z) curve for Si3N4.Δz is the spacing between the minima. Frequency: 400 MHz, coupling medium: distilled water, temperature: 30°C.
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Principle of the V(z) curve
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Vsaw reflected from discontinuous interface—(a) SAW incident onto a material having a jointed Interface; (b) SAW reflected from a material having a jointed interface
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(a) and (b) Simulated intensities of specimen; (c) and (d) actual intensities of specimen
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Location of measurement positions for Vsaw and residual stress in Si3N4 across and along jointed interface
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ΔVsaw and residual stress distribution on center line in Si3N4 across the jointed interface
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ΔVsaw and residual stress distribution on y=0.5 mm line in Si3N4 along jointed interface
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Correlation between ΔVsaw and residual stress values in Si3N4



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